Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

[en] We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

Disciplines :

Physics

Author, co-author :

Hu, Rongwei

Thomas, K. J.

Lee, Y.

Vogt, T.

Choi, E. S.

Mitrovic, V. F.

Hermann, Raphaël ; Université de Liège - ULiège > Département de physique > Département de physique

Grandjean, Fernande ; Université de Liège - ULiège > Département de physique > Département de physique

Canfield, P. C.

Kim, J. W.

Goldman, A. I.

Petrovic, C.

Language :

English

Title :

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Publication date :

2008

Journal title :

Physical Review. B, Condensed Matter and Materials Physics

ISSN :

1098-0121

eISSN :

1550-235X

Publisher :

American Physical Society, United States - Maryland

Volume :

Issue :

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 14 December 2012

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Bibliography

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