|Reference : EUV high resolution imager on-board Solar Orbiter: optical design and detector performan...|
|Scientific congresses and symposiums : Poster|
|Engineering, computing & technology : Aerospace & aeronautics engineering|
|EUV high resolution imager on-board Solar Orbiter: optical design and detector performances.|
|Halain, Jean-Philippe [Université de Liège - ULg > > CSL (Centre Spatial de Liège) >]|
|Mazzoli, Alexandra [Université de Liège - ULg > > CSL (Centre Spatial de Liège) >]|
|Rochus, Pierre [Université de Liège - ULg > > CSL (Centre Spatial de Liège) >]|
|Stockman, Yvan [Université de Liège - ULg > > CSL (Centre Spatial de Liège) >]|
|Berghmans, David |
|Auchère, Frédéric |
|BenMoussa, Ali |
|International Conference on Space Optics (ICSO|
|9-12 Octobre 2012|
|[en] Extreme Ultraviolet ; high-resolution imager ; Solar Orbiter ; CMOS-APS ; Off-axis|
|[en] The EUV high resolution imager (HRI) channel of the Extreme Ultraviolet Imager (EUI) on-board Solar Orbiter will observe the solar atmospheric layers at 17.4 nm wavelength with a 200 km resolution.
The HRI channel is based on a compact two mirrors off-axis design. The spectral selection is obtained by a multilayer coating deposited on the mirrors and by redundant Aluminum filters rejecting the visible and infrared light. The detector is a 2k x 2k array back-thinned silicon CMOS-APS with 10 µm pixel pitch, sensitive in the EUV wavelength range.
Due to the instrument compactness and the constraints on the optical design, the channel performance is very sensitive to the manufacturing, alignments and settling errors. A trade-off between two optical layouts was therefore performed to select the final optical design and to improve the mirror mounts. The effect of diffraction by the filter mesh support and by the mirror diffusion has been included in the overall error budget. Manufacturing of mirror and mounts has started and will result in thermo-mechanical validation on the EUI instrument structural and thermal model (STM).
Because of the limited channel entrance aperture and consequently the low input flux, the channel performance also relies on the detector EUV sensitivity, readout noise and dynamic range. Based on the characterization of a CMOS-APS back-side detector prototype, showing promising results, the EUI detector has been specified and is under development. These detectors will undergo a qualification program before being tested and integrated on the EUI instrument.
|Centre Spatial de Liège|
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