Reference : Impedance Spectroscopy of GeSn-based Heterostructures
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/127051
Impedance Spectroscopy of GeSn-based Heterostructures
English
Baert, Bruno mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Nakatsuka, Osamu [Nagoya University, Graduate School of Engineering > Department of Crystalline Materials Science > > >]
Zaima, Shigeaki [Nagoya University, Graduate School of Engineering > Department of Crystalline Materials Science > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
2013
ECS Transactions
The Electrochemical Society
50
9
481-490
Yes
International
1938-5862
1938-6737
Pennington
NJ
[en] GeSn ; Admittance spectroscopy ; Electrical characterization ; Heterostructures ; Semiconductors
[en] In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the basic semiconductor equations. We developed a numerical formalism based on a drift-diffusion model including a trap level and applied it to typical GeSn-based heterostructures by focusing on the electrical response under small-signal alternating current regime. The results demonstrate that our method provides an access to both microscopic and macroscopic properties, and thereon, to a physical interpretation of the electrical characteristics of GeSn-based structures by linking measurable quantities to micro-scale variations in the structures.
Researchers ; Professionals
http://hdl.handle.net/2268/127051
10.1149/05009.0481ecst
http://ecst.ecsdl.org/content/50/9/481.abstract

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