Reference : Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method
Scientific congresses and symposiums : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/126180
Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method
English
Baert, Bruno mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Nakatsuka, Osamu [Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science > >]
Zaima, Shigeaki [Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
2012
222nd ECS Meeting, 2012
ECS
Yes
International
222nd ECS Meeting, 2012
7-12/10/2012
ECS
Hawaii
HI
[en] Impedance spectroscopy ; Admittance spectroscopy ; GeSn ; Numerical simulation
[en] In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the semiconductor equations. We developed a numerical formalism based on a drift-diffusion model including a trap level and applied it to typical GeSn-based heterostructures by focusing on the electrical response under small-signal alternating current regime. The results demonstrate that our method provides an
access to both microscopic and macroscopic properties, and thereon, to a physical interpretation of the electrical characteristics of GeSn-based structures by linking measurable quantities to micro-scale variations in the structures.
Researchers ; Professionals
http://hdl.handle.net/2268/126180

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