Reference : Integration of III-V on Si for High-Mobility CMOS
Scientific congresses and symposiums : Unpublished conference
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/119160
Integration of III-V on Si for High-Mobility CMOS
English
Waldron, Niamh [imec > > > >]
Wang, Gang [MEMC > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Orzali, Tommaso [imec > > > >]
Merckling, Clement [imec > > > >]
Brammertz, Guy [imec > > > >]
Ong, Patrick [imec > > > >]
Winderickx, Gillis [imec > > > >]
Hellings, Geert [imec > > > >]
Eneman, Geert [imec > > > >]
Caymax, Matty [imec > > > >]
Meuris, Marc [imec > > > >]
Horiguchi, Naoto [imec > > > >]
Thean, Aaron [imec > > > >]
2012
No
Yes
International
4th International SiGe Technology and Device Meeting (ISTDM)
4-6/6/2012
University of California, Berkeley
Berkeley
USA
[en] Integration ; CMOS ; III-V
Researchers ; Professionals
http://hdl.handle.net/2268/119160
10.1109/ISTDM.2012.6222422

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