ORBi: Waldron Niamh - Integration of III-V on Si for High-Mobility CMOS

Reference : Integration of III-V on Si for High-Mobility CMOS


	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/119160

Title :	Integration of III-V on Si for High-Mobility CMOS
Language :	English
Author, co-author :	Waldron, Niamh [imec > > > >]
	Wang, Gang [MEMC > > > >]
	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Orzali, Tommaso [imec > > > >]
	Merckling, Clement [imec > > > >]
	Brammertz, Guy [imec > > > >]
	Ong, Patrick [imec > > > >]
	Winderickx, Gillis [imec > > > >]
	Hellings, Geert [imec > > > >]
	Eneman, Geert [imec > > > >]
	Caymax, Matty [imec > > > >]
	Meuris, Marc [imec > > > >]
	Horiguchi, Naoto [imec > > > >]
	Thean, Aaron [imec > > > >]
Publication date :	2012
On invitation :	Yes
Audience :	International
Event name :	4th International SiGe Technology and Device Meeting (ISTDM)
Event date :	4-6/6/2012
Event organizer :	University of California, Berkeley
Event place (city) :	Berkeley
Event country :	USA
Keywords :	[en] Integration ; CMOS ; III-V
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/119160
DOI :	10.1109/ISTDM.2012.6222422

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