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Integration of III-V on Si for High-Mobility CMOS
Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy et al.
20124th International SiGe Technology and Device Meeting (ISTDM)
 

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Keywords :
Integration; CMOS; III-V
Disciplines :
Electrical & electronics engineering
Author, co-author :
Waldron, Niamh;  imec
Wang, Gang;  MEMC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Orzali, Tommaso;  imec
Merckling, Clement;  imec
Brammertz, Guy;  imec
Ong, Patrick;  imec
Winderickx, Gillis;  imec
Hellings, Geert;  imec
Eneman, Geert;  imec
Caymax, Matty;  imec
Meuris, Marc;  imec
Horiguchi, Naoto;  imec
Thean, Aaron;  imec
More authors (4 more) Less
Language :
English
Title :
Integration of III-V on Si for High-Mobility CMOS
Publication date :
2012
Event name :
4th International SiGe Technology and Device Meeting (ISTDM)
Event organizer :
University of California, Berkeley
Event place :
Berkeley, United States
Event date :
4-6/6/2012
By request :
Yes
Audience :
International
Available on ORBi :
since 03 May 2012

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