Poster (Scientific congresses and symposiums)
Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
Baert, Bruno; Truong, Dao Y Nhi; Nakatsuka, Osamu et al.
20126th International SiGe Technology and Device Meeting (ISTDM)
 

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Keywords :
GeSn; Electrical simulation; Impedance; Admittance
Disciplines :
Physics
Author, co-author :
Baert, Bruno ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Truong, Dao Y Nhi;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Nakatsuka, Osamu;  Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science
Zaima, Shigeaki;  Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Language :
English
Title :
Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
Publication date :
2012
Event name :
6th International SiGe Technology and Device Meeting (ISTDM)
Event place :
Berkeley, United States - California
Event date :
4-6/06/2012
Audience :
International
Available on ORBi :
since 31 March 2012

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