Reference : Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures b...
Scientific congresses and symposiums : Poster
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/115788
Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
English
Baert, Bruno mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Truong, Dao Y Nhi [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures > >]
Nakatsuka, Osamu [Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science > >]
Zaima, Shigeaki [Nagoya University > Graduate School of Engineering > Department of Crystalline Materials Science > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
2012
Yes
International
6th International SiGe Technology and Device Meeting (ISTDM)
4-6/06/2012
Berkeley
CA
[en] GeSn ; Electrical simulation ; Impedance ; Admittance
Researchers ; Professionals
http://hdl.handle.net/2268/115788
10.1109/ISTDM.2012.6222503

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