Reference : Structure and bonding in liquid tellurium
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Chemistry
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/109712
Structure and bonding in liquid tellurium
English
Bichara, C. [> > > >]
Raty, Jean-Yves mailto [Université de Liège - ULg > Département de physique > Physique de la matière condensée]
Gaspard, Jean-Pierre mailto [Université de Liège - ULg > Département de physique > Département de physique]
1996
Physical Review. B, Condensed Matter and Materials Physics
American Physical Society
53
1
206-211211
Yes (verified by ORBi)
International
1098-0121
1550-235X
Woodbury
NY
[en] Theoretical or Mathematical/ bond angles ; bond lengths ; electrical conductivity transitions ; liquid structure ; melting ; Monte Carlo methods ; tellurium ; tight-binding calculations/ liquid Te ; atomic structure ; bonding mechanism ; tight-binding Monte Carlo simulation ; melting ; bond length ; short-long bond alternation ; bond angle ; electronic interaction ; lone pair orbitals ; semiconductor-metal transition ; 3.15 A ; Te/ A6125 Studies of specific liquid structures A6470D Solid-liquid transitions A7260 Mixed conductivity and conductivity transitions/ size 3.15E-10 m/ Te/el
[en] The atomic structure and bonding mechanism in liquid tellurium have been investigated by a tight-binding Monte Carlo simulation. On melting, the chain structure of the crystal is preserved in spite of some significant changes in the local atomic environment. A third covalent bond appears with a bond length (widely distributed around 3.15 Aring) intermediate between those characteristic of the crystal. A short-long alternation of the bonds takes place within the chains, in agreement with the most recent extended X-ray-absorption fine structure measurements. In addition, the bond angle within the chains is reduced. Our calculations clearly prove that these effects are due to the electronic interaction between the lone pair orbitals. The subsequent broadening of the lone pair band is responsible for the semiconductor to metal transition that takes place upon melting.
Researchers ; Professionals ; Students
http://hdl.handle.net/2268/109712
10.1103/PhysRevB.53.206
http://link.aps.org/doi/10.1103/PhysRevB.53.206

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