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Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy et al.
2012In 221st ECS Meeting
Peer reviewed
 

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Keywords :
III-V; CMOS
Disciplines :
Physics
Author, co-author :
Waldron, Niamh;  IMEC
Wang, Gang;  MEMC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Orzali, Tommaso;  IMEC
Merckling, Clement;  IMEC
Brammertz, Guy;  IMEC
Ong, Patrick;  IMEC
Winderickx, Gillis;  IMEC
Hellings, Geert;  IMEC
Eneman, Geert;  IMEC
Caymax, Matty;  IMEC
Meuris, Marc;  IMEC
Horiguchi, Naoto;  IMEC
Thean, Aaron;  IMEC
More authors (4 more) Less
Language :
English
Title :
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Publication date :
2012
Event name :
221st ECS Meeting
Event organizer :
ECS
Event place :
Seattle, United States
Event date :
6-11/5/2012
Audience :
International
Main work title :
221st ECS Meeting
Publisher :
ECS, Pennington, United States
ISBN/EAN :
2151-2043
Collection name :
ECS Meeting Abstracts MA2012-01
Peer reviewed :
Peer reviewed
Available on ORBi :
since 11 January 2012

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