ORBi: Waldron Niamh - Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Reference : Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Tr...


	Document type :	Scientific congresses and symposiums : Paper published in a book
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/2268/107503

Title :	Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Language :	English
Author, co-author :	Waldron, Niamh [IMEC > > > >]
	Wang, Gang [MEMC > > > >]
	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Orzali, Tommaso [IMEC > > > >]
	Merckling, Clement [IMEC > > > >]
	Brammertz, Guy [IMEC > > > >]
	Ong, Patrick [IMEC > > > >]
	Winderickx, Gillis [IMEC > > > >]
	Hellings, Geert [IMEC > > > >]
	Eneman, Geert [IMEC > > > >]
	Caymax, Matty [IMEC > > > >]
	Meuris, Marc [IMEC > > > >]
	Horiguchi, Naoto [IMEC > > > >]
	Thean, Aaron [IMEC > > > >]
Publication date :	2012
Main document title :	221st ECS Meeting
Publisher :	ECS
Collection and collection volume :	ECS Meeting Abstracts MA2012-01
Audience :	International
ISBN :	2151-2043
City :	Pennington
Country :	USA
Event name :	221st ECS Meeting
Event date :	6-11/5/2012
Event organizer :	ECS
Event place (city) :	Seattle
Event country :	USA
Keywords :	[en] III-V ; CMOS
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/107503
	also: http://hdl.handle.net/2268/107504

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