Reference : Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Tr...
Scientific congresses and symposiums : Paper published in a book
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/107503
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
English
Waldron, Niamh [IMEC > > > >]
Wang, Gang [MEMC > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Orzali, Tommaso [IMEC > > > >]
Merckling, Clement [IMEC > > > >]
Brammertz, Guy [IMEC > > > >]
Ong, Patrick [IMEC > > > >]
Winderickx, Gillis [IMEC > > > >]
Hellings, Geert [IMEC > > > >]
Eneman, Geert [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
Meuris, Marc [IMEC > > > >]
Horiguchi, Naoto [IMEC > > > >]
Thean, Aaron [IMEC > > > >]
2012
221st ECS Meeting
ECS
ECS Meeting Abstracts MA2012-01
Yes
International
2151-2043
Pennington
USA
221st ECS Meeting
6-11/5/2012
ECS
Seattle
USA
[en] III-V ; CMOS
Researchers ; Professionals
http://hdl.handle.net/2268/107503

There is no file associated with this reference.

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.