Reference : Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/102196
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition
English
You, Shuzhen [IMEC > > > >]
Decoutere, Stefaan [IMEC > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Van Huylenbroeck, Stefaan [IMEC > > > >]
Sibaja-Hernandez, Arturo [IMEC > > > >]
Venegas, Rafael [IMEC > > > >]
Loo, Roger [IMEC > > > >]
De Meyer, Kristin [IMEC > > > >]
2012
Thin Solid Films
Elsevier Science
520
3345
Yes (verified by ORBi)
International
0040-6090
[en] SiGe:C HBT ; Ge-spiked monoemitter ; trisilane ; low-temperature CVD ; chemical vapor deposition
[en] In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.
Researchers
http://hdl.handle.net/2268/102196
10.1016/j.tsf.2011.10.079

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Restricted access
You_TSF_520_3345_2012.pdfPublisher postprint417.1 kBRequest copy

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.