[en] InP nanowires are fabricated by organo-metallic vapour phase epitaxy and studied via photoluminescence measurements performed on single nanowires, finding evidence of state filling with increasing excitation power density. To increase flexibility in fabrication technology we developed a wet chemical procedure to grow a CdS shell on these wires. In these InP–CdS wires the luminescence efficiency was decreased with respect to the bare wires. The CdS capping procedure needs further investigations to improve the emission properties of nanowires, in order to become technically useful. We suggest as possible improvements of this technique to increase the bath temperature and/or illuminate the sample with UV radiation during the capping procedure.