Reference : Electronic properties and quantum transport in Graphene-based nanostructures
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/101226
Electronic properties and quantum transport in Graphene-based nanostructures
English
Dubois, Simon [Université Catholique de Louvain - UCL > > > >]
Zanolli, Zeila mailto [Université Catholique de Louvain - UCL > > > >]
Declerck, Xavier [Université Catholique de Louvain - UCL > > > >]
Charlier, Jean-Christophe [Université catholique de Louvain > > > >]
2009
European Physical Journal B -- Condensed Matter
Springer Science & Business Media B.V.
72
1
1-24
Yes (verified by ORBi)
International
1434-6028
New York
NY
[en] Structure of nanoscale materials. ; Electronic transport in nanoscale materials and structures
[en] Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) represent a novel class of low-dimensional materials. All these graphene-based nanostructures are expected to display the extraordinary electronic, thermal and mechanical properties of graphene and are thus promising candidates for a wide range of nanoscience and nanotechnology applications. In this paper, the electronic and quantum transport properties of these carbon nanomaterials are reviewed. Although these systems share the similar graphene electronic structure, confinement effects are playing a crucial role. Indeed, the lateral confinement of charge carriers could create an energy gap near the charge neutrality point, depending on the width of the ribbon, the nanotube diameter, the stacking of the carbon layers regarding the different crystallographic orientations involved. After reviewing the transport properties of defect-free systems, doping and topological defects (including edge disorder) are also proposed as tools to taylor the quantum conductance in these materials. Their unusual electronic and transport properties promote these carbon nanomaterials as promising candidates for new building blocks in a future carbon-based nanoelectronics, thus opening alternatives to present silicon-based electronics devices.
Researchers
http://hdl.handle.net/2268/101226
10.1140/epjb/e2009-00327-8
http://epjb.edpsciences.org/index.php?option=com_article&access=doi&doi=10.1140/epjb/e2009-00327-8&Itemid=129

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