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See detailLow-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate
Nguyen, Ngoc Duy ULg; Loo, Roger; Caymax, Matty

Conference (2007)

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order ... [more ▼]

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application. [less ▲]

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See detailLow-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application
Nguyen, Ngoc Duy ULg; Loo, Roger; Caymax, Matty

in Applied Surface Science (2008), 264

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order ... [more ▼]

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application. [less ▲]

Detailed reference viewed: 33 (3 ULg)
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See detailLow-viscosity allophanates containing actinically curable groups
Detrembleur, Christophe ULg; Weikard, Jan; Greszta-Franz, Dorota et al

Patent (2011)

A process for preparing binders containing allophanate groups which contain, at the oxygen atom of the allophanate group that is bonded via two single bonds, organic radicals with activated groups capable ... [more ▼]

A process for preparing binders containing allophanate groups which contain, at the oxygen atom of the allophanate group that is bonded via two single bonds, organic radicals with activated groups capable of participating in a polymerization reaction with ethylenically unsaturated compounds on exposure to actinic radiation; the process includes reacting A) one or more compounds containing uretdione groups with B) one or more OH-functional compounds which contain groups capable of participating in a polymerization reaction with ethylenically unsaturated compounds on exposure to actinic radiation, and C) optionally further NCO-reactive compounds, and D) in the presence of one or more compounds containing phenoxide groups, as catalysts.; The binders can be used in preparing coatings, coating materials, coating compositions, adhesives, printing inks, casting resins, dental compounds, sizes, photoresists, stereolithography systems, resins for composite materials and sealants. [less ▲]

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See detailLow-viscosity allophanates containing actinically curable groups
Detrembleur, Christophe ULg; Weikard, Jan; Greszta-Franz, Dorota et al

Patent (2008)

A process for preparing binders containing allophanate groups which contain, at the oxygen atom of the allophanate group that is bonded via two single bonds, organic radicals with activated groups capable ... [more ▼]

A process for preparing binders containing allophanate groups which contain, at the oxygen atom of the allophanate group that is bonded via two single bonds, organic radicals with activated groups capable of participating in a polymerization reaction with ethylenically unsaturated compounds on exposure to actinic radiation; the process includes reacting A) one or more compounds containing uretdione groups with B) one or more OH-functional compounds which contain groups capable of participating in a polymerization reaction with ethylenically unsaturated compounds on exposure to actinic radiation, and C) optionally further NCO-reactive compounds, and D) in the presence of one or more compounds containing phenoxide groups, as catalysts.; The binders can be used in preparing coatings, coating materials, coating compositions, adhesives, printing inks, casting resins, dental compounds, sizes, photoresists, stereolithography systems, resins for composite materials and sealants. [less ▲]

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See detailLow-viscosity allophanates having actinically hardenable groups
Detrembleur, Christophe ULg; Weikard, Jan; Richter, Frank et al

Patent (2009)

Die vorliegende Erfindung betrifft niedrigviskose Umsetzungsprodukte von Polyisocyanaten, die aktivierte unter Einwirkung aktinischer Strahlung mit ethylenisch ungesättigten Verbindungen unter ... [more ▼]

Die vorliegende Erfindung betrifft niedrigviskose Umsetzungsprodukte von Polyisocyanaten, die aktivierte unter Einwirkung aktinischer Strahlung mit ethylenisch ungesättigten Verbindungen unter Polymerisation reagierende Gruppen enthalten, ein Verfahren zu ihrer Herstellung sowie deren Verwendung in Beschichtungsmitteln. [less ▲]

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See detailLow-viscosity allophanates having actinically hardenable groups
Detrembleur, Christophe ULg

Patent (2007)

Die vorliegende Erfindung betrifft niedrigviskose Umsetzungsprodukte von Polyisocyanaten, die aktivierte unter Einwirkung aktinischer Strahlung mit ethylenisch ungesättigten Verbindungen unter ... [more ▼]

Die vorliegende Erfindung betrifft niedrigviskose Umsetzungsprodukte von Polyisocyanaten, die aktivierte unter Einwirkung aktinischer Strahlung mit ethylenisch ungesättigten Verbindungen unter Polymerisation reagierende Gruppen enthalten, ein Verfahren zu ihrer Herstellung sowie deren Verwendung in Beschichtungsmitteln. [less ▲]

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See detailLow-viscosity allophanates having actinically hardenable groups
Weikard, Jan; Detrembleur, Christophe ULg; Grestza-Franz, Dorota et al

Patent (2006)

A radiation-curing binder containing allophanate groups is prepared by reacting at =130[deg]C compound(s) containing uretdione groups with OH-functional compounds containing groups reacting with ... [more ▼]

A radiation-curing binder containing allophanate groups is prepared by reacting at =130[deg]C compound(s) containing uretdione groups with OH-functional compounds containing groups reacting with polymerization with ethylenically unsaturated compounds on exposure to actinic radiation, optionally other NCO-reactive compounds, in the presence of a catalyst comprising at least one zinc compound to form allophanate groups by opening the uretdione ring. Independent claims are also included for: (A) a coating composition comprising the radiation-curing binder(s) containing allophanate groups, optionally polyisocyanate(s) containing free or blocked isocyanate groups, which are free from groups which react, with polymerization, with ethylenically unsaturated compounds on exposure to actinic radiation, optionally other compounds containing groups which react, with polymerization, with ethylenically unsaturated compounds on exposure to actinic radiation, and optionally contain free or blocked NCO groups, optionally one or more isocyanate-reactive compounds, initiator(s), and optionally solvents; and (B) a substrate coated with a coating obtained from the radiation-curing binder containing allophanate groups. [less ▲]

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Peer Reviewed
See detailLower airway dysfunction in athletic horses
Votion, Dominique ULg; Art, Tatiana ULg; Lekeux, Pierre ULg

in In Proceedings: Journées Vétérinaires Suisses (1996, September)

During the last decade, research in exercising horses provided growing evidence that the respiratory system may be a limiting factor for maximal performance, even in healthy animals. Therefore, any ... [more ▼]

During the last decade, research in exercising horses provided growing evidence that the respiratory system may be a limiting factor for maximal performance, even in healthy animals. Therefore, any pulmonary dysfunction, even subclinical or moderate, may significantly impair the aerobic metabolism and consequently performance of exercising horses. This paper briefly presents the main respiratory troubles of lower airway as well as the main pulmonary function tests used to diagnose these diseases. [less ▲]

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See detailLower airway function: response to exercise and training
Art, Tatiana ULg; Bayly, Warwick

in Hinchcliff, Kenneth W.; Kaneps, Andris J.; Geor, Raymont J. (Eds.) Equine Sports Medicine and Surgery. Basic and clinical Sciences of the Equine Athlete. 2d Edition (2014)

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See detailLower and Middle Devonian miospore-based stratigraphy in Libya and its relation to the megafloras and faunas
Streel, Maurice ULg; Fairon-Demaret, Muriel ULg; Gerrienne, Philippe ULg et al

in Review of Palaeobotany and Palynology (1990), 66(3), 229--242

Detailed reference viewed: 20 (7 ULg)
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See detailLower Carboniferous corals from the Zonguldak Area (Black Sea, Northwestern Turkey).
Denayer, Julien ULg

in Gerrienne, Philippe; Petus, Elodie; Steemans, Philippe (Eds.) Miscelanea palaeontologica (2009, December 04)

Detailed reference viewed: 36 (5 ULg)
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See detailLower Carboniferous Rugose corals from the Arabian Plate: an insight from the Hakkari area (SE Turkey)
Denayer, Julien ULg; Hoşgör

in Journal of Asian Earth Sciences (2014), 79(1), 345-357

Detailed reference viewed: 37 (3 ULg)
See detailLower Carboniferous Rugose corals from the Zonguldak area (Northwestern Turkey)
Denayer, Julien ULg

in Aldridge, R.; Harper, D. (Eds.) Abstracts volume of the Third International Palaeontological Congress (IPC3) (2010)

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See detailLower critical field and SNS-Andreev spectroscopy of 122-arsenides: Evidence of nodeless superconducting gap
Abdel-Hafiez, M.; Pereira, P.J.; Kuzmichev, S.A. et al

in Physical Review. B : Condensed Matter (2014), 90

Using two experimental techniques, we studied single crystals of the 122-FeAs family with almost the same critical temperature, Tc. We investigated the temperature dependence of the lower critical field ... [more ▼]

Using two experimental techniques, we studied single crystals of the 122-FeAs family with almost the same critical temperature, Tc. We investigated the temperature dependence of the lower critical field Hc1(T) of a Ca0.32Na0.68Fe2As2 (Tc ≈ 34 K) single crystal under static magnetic fields H parallel to the c axis. The temperature dependence of the London penetration depth can be described equally well either by a single anisotropic s-wave-like gap or by a two-gap model, while a d-wave approach cannot be used to fit the London penetration depth data. Intrinsic multiple Andreev reflection effect spectroscopy was used to detect bulk gap values in single crystals of the intimate compound Ba0.65K0.35Fe2As2, with the same Tc. We estimated the range of the large gap value L = 6–8 meV (depending on small variation of Tc) and its a k space anisotropy of about 30%, and the small gap Delta ≈ 1.7 ± 0.3 meV. This clearly indicates that the gap structure of our investigated systems more likely corresponds to a nodeless s-wave two gaps. [less ▲]

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See detailThe Lower Devonian around the "Lac de la Gileppe"
Steemans, Philippe ULg; Gerrienne, Philippe ULg

Conference (1994)

Detailed reference viewed: 27 (0 ULg)
See detailLower Devonian flora from Morocco and its palaeogeographical implications
Gerrienne, Philippe ULg; Fairon-Demaret, Muriel ULg; Galtier, J. et al

Conference (1997)

Detailed reference viewed: 5 (0 ULg)