N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser annealNguyen, Ngoc Duy ; ; et alConference (2011) Detailed reference viewed: 38 (0 ULg) Epitaxial Si, SiGe and Ge for high-performance devices; ; et al Conference (2010, September 23) Detailed reference viewed: 62 (4 ULg) |
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