State of the art of InP and GaAs quantum cascade lasers; ; et al in IEEE International Conference on Indium Phosphide & Related Materials (IPRM) (2002) The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect ... [more ▼] The key physical phenomena associated with long-wavelength infrared emission and laser action in quantum cascade lasers based on InP/GaInAs/AlInAs and GaAs/AlGaAs heterostructures are reviewed. The effect of different tunnel injection schemes on the hot-electron energy distributions is compared. High-power superlattice lasers with improved high-energy injection schemes are described. The local temperature distribution, the thermal resistance and the hot-phonon effects are monitored in operating devices by micro-probe Raman and luminescence measurements. [less ▲] Detailed reference viewed: 4 (0 ULg)![]() GaAs-based Quantum Cascade Lasers: design, fabrication and perspective.Zanolli, Zeila ; ; et al(2002) Detailed reference viewed: 8 (0 ULg) |
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