References of "Gencarelli, Federica"
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Peer Reviewed
See detailElectrical characterization of pGeSn/nGe diodes
Baert, Bruno ULg; Gupta, Somya; Gencarelli, Federica et al

Conference (2014, June 03)

I-V characteristics of pGeSn/nGe diodes have been measured and show very good properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the ... [more ▼]

I-V characteristics of pGeSn/nGe diodes have been measured and show very good properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominating influence of parameters such as the band gap energy of the GeSn layer. C-V characteristics showing little frequency dependence have also been measured, and their analysis for the determination of the carrier concentration is confirmed by simulations. More investigations, including the effect of temperature and other defects at the interface or in the bulk of either layers are still required in order to explain some of the observed behaviors, notably the reverse saturation current. [less ▲]

Detailed reference viewed: 22 (0 ULg)
Peer Reviewed
See detailTheoretical and experimental investigation of the GeSn bandgap
Shimura, Yosuke; Wang, Wei; Gencarelli, Federica et al

Conference (2013, September)

Detailed reference viewed: 38 (0 ULg)
Peer Reviewed
See detailElectrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori et al

Conference (2013, June 04)

Detailed reference viewed: 104 (15 ULg)
Peer Reviewed
See detailBandgap Measurement by Spectroscopic Ellipsometry for Strained Ge1-xSnx
Shimura, Yosuke; Wang, Wei; Nieddu, Thomas ULg et al

Conference (2013, June 04)

Detailed reference viewed: 107 (3 ULg)
Peer Reviewed
See detailComposition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition
Wang, Wei; Shimura, Yosuke; Nieddu, Thomas ULg et al

Conference (2013, June 04)

Detailed reference viewed: 68 (1 ULg)
See detailEpitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin et al

Conference (2010, September 23)

Detailed reference viewed: 78 (5 ULg)