Bandgap Measurement by Spectroscopic Ellipsometry for Strained Ge1-xSnx; ; Nieddu, Thomas et alConference (2013, June 04) Detailed reference viewed: 20 (0 ULg) Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers; ; et al Conference (2013, June 04) Detailed reference viewed: 18 (0 ULg) Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition; ; Nieddu, Thomas et alConference (2013, June 04) Detailed reference viewed: 16 (0 ULg) Epitaxial Si, SiGe and Ge for high-performance devices; ; et al Conference (2010, September 23) Detailed reference viewed: 62 (4 ULg) |
||