References of "Gencarelli, Federica"
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See detailImpact of traps on the electrical characteristics of GeSn/Ge diodes
Baert, Bruno ULg; Gupta, Somya; Gencarelli, Federica et al

Poster (2014, September 15)

Germanium-tin alloys are currently receiving a lot of attention as materials for high performance MOSFET devices. Much interest is focused on the direct band gap for Sn concentrations above 8-10% and the ... [more ▼]

Germanium-tin alloys are currently receiving a lot of attention as materials for high performance MOSFET devices. Much interest is focused on the direct band gap for Sn concentrations above 8-10% and the achievement of high mobility values, which can be further increased by the strain due to the lattice mismatch with Ge or Si. GeSn is therefore expected to play a key role in the development of either source and drain stressors for Ge p-MOSFETs or for GeSn channel MOSFETs. However, despite recent tremendous progress in the growth of such materials, the impact of defects at the interface between Ge and GeSn has not been completely characterized. As the processing of diodes contains many of the steps necessary to the fabrication of MOSFET devices, we have investigated the effect of traps on the electrical characteristics of p-GeSn/n-Ge diodes, made from GeSn layers grown by CVD on Ge and in-situ doped with Boron. Using temperature-dependent current-voltage (I-V) and capacitance- voltage (C-V) measurements, we have calculated the ideality factor of the diodes, the activation energy of the reverse saturation current and the carrier concentration of the Ge substrate. In this work, based on the comparison with results obtained from numerical simulations, we discuss these characteristics in view of assessing the extent to which electronic trap states in these heterostructures affect their electrical properties. [less ▲]

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See detailElectrical characterization of pGeSn/nGe diodes
Baert, Bruno ULg; Gupta, Somya; Gencarelli, Federica et al

Conference (2014, June 03)

I-V characteristics of pGeSn/nGe diodes have been measured and show very good properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the ... [more ▼]

I-V characteristics of pGeSn/nGe diodes have been measured and show very good properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominating influence of parameters such as the band gap energy of the GeSn layer. C-V characteristics showing little frequency dependence have also been measured, and their analysis for the determination of the carrier concentration is confirmed by simulations. More investigations, including the effect of temperature and other defects at the interface or in the bulk of either layers are still required in order to explain some of the observed behaviors, notably the reverse saturation current. [less ▲]

Detailed reference viewed: 37 (1 ULg)
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See detailTheoretical and experimental investigation of the GeSn bandgap
Shimura, Yosuke; Wang, Wei; Gencarelli, Federica et al

Conference (2013, September)

Detailed reference viewed: 42 (0 ULg)
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See detailElectrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori et al

Conference (2013, June 04)

Detailed reference viewed: 109 (15 ULg)
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See detailBandgap Measurement by Spectroscopic Ellipsometry for Strained Ge1-xSnx
Shimura, Yosuke; Wang, Wei; Nieddu, Thomas ULg et al

Conference (2013, June 04)

Detailed reference viewed: 119 (6 ULg)
Peer Reviewed
See detailComposition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition
Wang, Wei; Shimura, Yosuke; Nieddu, Thomas ULg et al

Conference (2013, June 04)

Detailed reference viewed: 74 (1 ULg)
See detailEpitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin et al

Conference (2010, September 23)

Detailed reference viewed: 81 (5 ULg)