Schottky-Barrier height lowering by an increase of the substrate doping in PtSi Schottky barrier source/drain FETsLousberg, Grégory ; ; et alin IEEE Electron Device Letters (2007), 28(2), 123-125 In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied ... [more ▼] In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is responsible for a larger hole SBH lowering through an image-force mechanism, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations. show that the channel doping concentration is also critical for short-channel p/n-silicon-on-insulator SBFET performance. [less ▲] Detailed reference viewed: 43 (3 ULg) Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETsLousberg, Grégory ; ; et alin Proceedings of ESSDERC 2006 (2006, September) In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The ... [more ▼] In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p-SOI SBFETs performance [less ▲] Detailed reference viewed: 24 (0 ULg) |
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