References of "Luysberg, M"
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See detailFabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility
Driussi, F.; Esseni, D.; Selmi, L. et al

in IEEE (Ed.) 37th European Solid State Device Research Conference (ESSDERC) (2007)

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth ... [more ▼]

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments. [less ▲]

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See detailLarge current enhancement in n-MOSFETs with strained Si on insulator
Mantl, S.; Buca, D.; Zhao, Q. et al

in International Semiconductor Device Research Symposium, 2007 (2007)

As scaling of the critical transistor dimensions below 65 nm has been slowed down, the implementation of novel materials, especially high mobility channel materials is most attractive to boost the ... [more ▼]

As scaling of the critical transistor dimensions below 65 nm has been slowed down, the implementation of novel materials, especially high mobility channel materials is most attractive to boost the transistor performance. Applying strain to silicon has become a successful route. The electron mobility can be enhanced by biaxial strain introduced into Si by epitaxial growth of Si on a strain relaxed SiGe layer or by so called process induced methods applied directly on transistor level. The combination of strained Si and SOI is particularly promising due to the combination of the enhanced mobilities and the inherent advantages of SOI. First long channel n-MOSFETs with gate lengths of 5 to 50 mum and a 6.6 nm thick SiO2 gate dielectric were fabricated. For comparison, devices on unstrained SOI were made. The transfer characteristics of a fully depleted sSOI-MOSFET with a gate length of 5 mum and a gate width of 20 mum indicating an inverse sub-threshold slope of 75mV/dec. [less ▲]

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See detailStrained Si-on-insulator for advanced CMOS devices
Mantl, S.; Buca, D.; Zhao, Q. et al

Poster (2007)

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